发明名称 |
Vertical-type semiconductor devices and methods of manufacturing the same |
摘要 |
In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated. |
申请公布号 |
US9070581(B2) |
申请公布日期 |
2015.06.30 |
申请号 |
US201314083971 |
申请日期 |
2013.11.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Son Yong-Hoon;Lee Jong-Wook;Kang Jong-Hyuk |
分类号 |
H01L21/336;H01L27/105;H01L27/115;H01L29/66;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
Onello & Mello, LLP. |
代理人 |
Onello & Mello, LLP. |
主权项 |
1. A method of manufacturing a vertical-type non-volatile memory device, comprising:
alternatively stacking two different layers on a substrate; partially etching the two different layers forming openings that have a linear shape extending in a first direction to form a multi-layered structure, the multi-layered structure including a plurality of insulation layer patterns extending in the openings perpendicular with respect to the substrate and spaced apart from each other; forming a trench penetrating the two different layers vertically with respect to the substrate; forming at least one of a tunnel oxide layer, a charge-trapping layer and a blocking dielectric layer in the trench; forming a semiconductor layer in the trench; forming a layer including metal on the semiconductor layer; thermally treating the layer including metal and the semiconductor layer; and removing a portion of the layer including metal, wherein forming the trench penetrating the two different layers comprises: removing a portion of the multi-layered structure between the openings to from the trench that extends in the first direction. |
地址 |
KR |