发明名称 Solid state power controller gate control
摘要 A system for controlling gate power includes a metal oxide semiconductor field effect transistor (MOSFET) configured to supply power to a load according to a gate control voltage applied to a gate of the MOSFET. The system includes a gate control circuit configured to turn on and off the gate control voltage supplied to the gate of the MOSFET. The system also includes a ramping circuit configured to perform at least one of ramping up a voltage applied to the gate of the MOSFET based on the gate control circuit turning on power to the gate of the MOSFET and ramping down the voltage applied to the gate of the MOSFET based on the gate control circuit turning off power to the gate of the MOSFET.
申请公布号 US9071245(B2) 申请公布日期 2015.06.30
申请号 US201313869516 申请日期 2013.04.24
申请人 Hamilton Sundstrand Corporation 发明人 Rozman Gregory I.;Moss Steven J.
分类号 H03K3/00;H03K17/16 主分类号 H03K3/00
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A system for controlling gate power, comprising: a metal oxide semiconductor field effect transistor (MOSFET) configured to supply power to a load according to a gate control voltage applied to a gate of the MOSFET; a gate control circuit configured to turn on and off the gate control voltage supplied to the gate of the MOSFET; a ramping circuit configured to perform at least one of ramping up a voltage applied to the gate of the MOSFET based on the gate control circuit turning on power to the gate of the MOSFET and ramping down the voltage applied to the gate of the MOSFET based on the gate control circuit turning off power to the gate of the MOSFET; and wherein the gate control circuit includes a first pulse transformer to provide power to a positive voltage gate rail and a second pulse transformer to provide power to a negative voltage gate rail.
地址 Windsor Locks CT US