Method and apparatus for plasma dicing a semi-conductor wafer

摘要

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

主权项

1. A method for plasma dicing a substrate, the method comprising:
providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; providing an electrostatic chuck within said work piece support, said electrostatic chuck having a seal band, and at least one clamping electrode; providing a cover ring; placing a work piece onto said work piece support, said work piece having a support film, a frame and the substrate; generating a plasma using the plasma source; etching said work piece using the generated plasma; and electrostatically clamping said work piece to said work piece support using said electrostatic clamp during said etching step, said clamping electrode of the electrostatic chuck overlapping any portion of said seal band that is not overlapped by said cover ring during said etching step.