Transistor having elevated drain finger termination

摘要

According to an exemplary implementation, a transistor includes drain finger electrodes interdigitated with source finger electrodes. The transistor also includes a current conduction path in a semiconductor substrate between the drain finger electrodes and the source finger electrodes. At least one of the drain finger electrodes has a drain finger electrode end and a drain finger electrode main body, where the drain finger electrode main body is non-coplaner with at least a portion of the drain finger electrode end. The transistor may also include a dielectric material situated between at least a portion of the drain finger electrode end and the semiconductor substrate. The dielectric material can be an increasing thickness dielectric material. The dielectric material can thus elevate the drain finger electrode end over the semiconductor substrate. Further, the drain finger electrode end can have an increased radius of curvature.

主权项

1. A transistor comprising:
drain finger electrodes interdigitated with source finger electrodes; current conduction paths in a semiconductor substrate between said drain finger electrodes and said source finger electrodes; at least one of said drain finger electrodes having a drain finger electrode main body and a drain finger electrode end, wherein at least a portion of said drain finger end is non-coplanar with said drain finger electrode main body.