发明名称 Method of manufacturing a semiconductor device and wafer
摘要 The present invention prevents bumps on semiconductor chips from sticking to probe needles and coming off from the semiconductor chips. A wafer has effective areas where a plurality of bumps (first bumps) are formed. The bumps are formed on the side of an active surface of the semiconductor chips. The wafer further has non-effective areas where a plurality of dummy bumps are formed. Among the dummy bumps, some positioned at the outermost circumference are dummy bumps (second bumps) that are smaller than the other bumps. The dummy bumps (second bumps) intersect the inner peripheral edge of a shielding member as viewed in a plan view. The dummy bumps (second bumps) are formed over third pad electrodes. A bump-formation insulating film is removed from over the entire third pad electrodes.
申请公布号 US9070754(B2) 申请公布日期 2015.06.30
申请号 US201313752194 申请日期 2013.01.28
申请人 Renesas Electronics Corporation 发明人 Yutani Akinori;Soejima Kouji
分类号 H01L23/00;H01L21/768;H01L23/48;H01L23/31;H01L21/56;H01L21/66 主分类号 H01L23/00
代理机构 McGinn IP Law Group, PLLC 代理人 McGinn IP Law Group, PLLC
主权项 1. A method of manufacturing a semiconductor device comprising the steps of: preparing a wafer including effective areas to be commercially available semiconductor chips and non-effective areas to be commercially unavailable semiconductor chips at a periphery of the wafer, each of the effective areas having a plurality of first pad electrodes, and each of the non-effective areas having a plurality of second pad electrodes and a plurality of third pad electrodes; forming a bump-formation insulating film over the first pad electrodes, the second pad electrodes and the third pad electrodes; removing the bump-formation insulating film from over a portion of the first pad electrodes to form first openings, and from over an entirety of the second pad electrodes and third pad electrodes, the third pad electrodes intersecting an edge of a light-shielding member; forming a photosensitive film over the bump-formation insulating film, the first pad electrodes, and the second pad electrodes; exposing to light the photosensitive film over the wafer with the periphery covered by the light-shielding member; forming bump-formation openings in the photosensitive film over the first pad electrodes, the second pad electrodes, and the third pad electrodes by developing the photosensitive film; and forming bumps in the bump-formation openings by plating the wafer with the photosensitive film as a mask.
地址 Kawasaki-shi, Kanagawa JP
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