Through-substrate via shielding

摘要

A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.

主权项

1. A method of forming a semiconductor apparatus, comprising:
forming a substrate structure comprising a silicon substrate layer; forming an epilayer on the silicon substrate layer; forming an insulator layer on the epilyaer such that insulator layer is interposed between silicon substrate layer and the epilayer; forming a conductive through-substrate via extending through the silicon substrate layer; forming a conductive wall in the substrate structure, the conductive wall being in electrical contact with the silicon substrate layer and having an end that contact the insulator epilayer; forming a semiconductor device in the substrate structure; and forming a through-substrate via in the substrate structure and that is separated completely from the conductive wall, the through-substrate via formed on an opposite side of the conductive wall from the semiconductor device, the through-substrate via separated from the silicon substrate by an insulator.