| 发明名称 | Method of patterning a semiconductor device having improved spacing and shape control and a semiconductor device | ||
| 摘要 | A semiconductor device includes a semiconductor substrate, a first active region in the semiconductor substrate, and a second active region in the semiconductor substrate. The semiconductor device further includes a first conductive line over the semiconductor substrate electrically connected to the first active region and having a first end face adjacent to the second active region, and the first end face having an image log slope of greater than 15 μm−1. | ||
| 申请公布号 | US9070688(B2) | 申请公布日期 | 2015.06.30 |
| 申请号 | US201314053973 | 申请日期 | 2013.10.15 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Chen Jhun Hua;Tung Yu-Lung;Chen Chi-Tien;Lin Hua-Tai;Chen Hsiang-Lin;Hsieh Hung-Chang;Chen Yi-Fan |
| 分类号 | H01L21/8242;H01L23/528;H01L21/8238;H01L21/768;H01L21/311 | 主分类号 | H01L21/8242 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate; a first active region in the semiconductor substrate; a second active region in the semiconductor substrate; a first conductive line over the semiconductor substrate electrically connected to the first active region and having a first end face adjacent to the second active region, and the first end face having an image log slope of greater than 15 μm−1. | ||
| 地址 | TW | ||