Mechanisms for forming patterns

摘要

The present disclosure provides a method for forming patterns in a semiconductor device. In accordance with some embodiments, the method includes providing a substrate and a patterning-target layer over the substrate; forming one or more mandrel patterns over the patterning-target layer; forming an opening in a resist layer by removing a first mandrel pattern and removing a portion of the resist layer that covers the first mandrel pattern; forming spacers adjacent to sidewalls of a second mandrel pattern; removing the second mandrel pattern to expose the spacers; forming a patch pattern over the spacers and aligned with the opening; etching the patterning-target layer using the patch pattern and the spacers as mask elements to form final patterns; and removing the patch pattern and the spacers to expose the final patterns.

主权项

1. A method for forming patterns in a semiconductor device, comprising:
providing a substrate and a patterning-target layer over the substrate; forming one or more mandrel patterns over the patterning-target layer; forming an opening in a resist layer by removing a first mandrel pattern and a portion of the resist layer that covers the first mandrel pattern; forming spacers adjacent to sidewalls of a second mandrel pattern; removing the second mandrel pattern to expose the spacers; forming a patch pattern over the spacers and aligned with the opening; etching the patterning-target layer using the patch pattern and the spacers as mask elements to form final patterns; and removing the patch pattern and the spacers to expose the final patterns, wherein a first final pattern is located at a distance in a range from about (n+0.3) times of a pitch to about (n+0.8) times of the pitch away from an adjacent second final pattern, wherein n is an integer number, and wherein the pitch is a distance between two adjacent spacers plus a width of a spacer.