Memory element and memory apparatus with a plurality of magnetic layers and an oxide layer

摘要

A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

主权项

1. A memory element, comprising:
a layered structure, comprising:
a memory layer having a magnetization, wherein the magnetization direction is configured to be changed depending on information by applying a current in a lamination direction of the layered structure to record the information in the memory layer;a magnetization-fixed layer;an intermediate layer comprising a non-magnetic material and disposed between the memory layer and the magnetization-fixed layer; andan oxide layer in contact with a first surface of the memory layer, wherein a second surface of the memory layer opposed to the first surface is in contact with the intermediate layer, and wherein at least a portion of the oxide layer at the interface of the oxide layer and the memory layer comprises an Li-based oxide.