发明名称 Scalable and high yield synthesis of transition metal bis-diazabutadienes
摘要 The present disclosure is directed at the synthesis of transition metal bis-diazabutadienes as precursors to enable atomic layer deposition (ALD) or chemical vapor deposition (CVD) of transition metals on metallic surfaces. The transition metal bis-diazabutadienes may be prepared in a two-step synthetic procedure at relatively high yields and are particularly suitable for industrial scale-up.
申请公布号 US9067958(B2) 申请公布日期 2015.06.30
申请号 US201314053249 申请日期 2013.10.14
申请人 Intel Corporation 发明人 Romero Patricio E.
分类号 C07F15/00;C07F11/00;C23C16/18;C07F15/06;C07F15/02;C07F15/04 主分类号 C07F15/00
代理机构 Grossman, Tucker, Perreault & Pfleger, PLLC 代理人 Grossman, Tucker, Perreault & Pfleger, PLLC
主权项 1. A method for forming a transition metal bis-diazabutadiene comprising: reacting in a first step, in the absence of a reducing agent, a diazabutadiene (DABD) with a transition metal halide and forming a DABD-metal halide complex, wherein said DABD has the following structure: wherein R1 is a C1-C12 alkyl group, amine or a C6-C18 aryl group and R2 is hydrogen, a C1-C10 alkyl, a C6-C18 aryl group, amino, C1-C12 alkylamino or a C2-C24 dialkylamino group; said formed DABD-metal halide complex has the following structure: wherein R1 is a C1-C12 alkyl group, amine or a C6-C18 aryl group and R2 is hydrogen, a C1-C10 alkyl, a C6-C18 aryl group, amino, C1-C12 alkylamino or a C2-C24 dialkylamino group, X is Cl or Br and M is a transition metal; reacting in a second step said DABD-metal halide complex with additional DABD in the presence of a reducing agent and forming a transition metal bis-diazabutadiene of the following structure: wherein R1 is a C1-C12 alkyl group, amine or a C6-C18 aryl group and R2 is hydrogen, a C1-C10 alkyl, a C6-C18 aryl group, amino, C1-C12 alkylamino or a C2-C24 dialkylamino group and M is a transition metal; wherein said yield of the transition metal bis-diazabutadiene is at or greater than 85%.
地址 Santa Clara CA US