| 发明名称 | Inorganic oxide thin film and method for preparing the same | ||
| 摘要 | A quantum-dots containing multi-component inorganic oxide thin film is provided to include an amorphous inorganic oxide bulk region and a plurality of crystalline inorganic oxide regions, wherein the crystalline inorganic oxide regions are discontinuously formed to be surrounded by the amorphous inorganic oxide of the bulk region. | ||
| 申请公布号 | US9070903(B2) | 申请公布日期 | 2015.06.30 |
| 申请号 | US201314029158 | 申请日期 | 2013.09.17 |
| 申请人 | Samsung Display Co., Ltd. | 发明人 | Kim Dong Chan;Yoon Seok Gyu;Hwang Kyu Hwan;Kim Eung Do;Jung Bo Ra;Seo Dong Kyu;Kim Won Jong;Song Young Woo;Lee Jong Hyuk |
| 分类号 | H01J1/62;H01L51/52;G02B5/00 | 主分类号 | H01J1/62 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A structure comprising a quantum-dots containing multi-component inorganic oxide thin film, the thin film having an amorphous inorganic oxide bulk region and a plurality of crystalline inorganic oxide regions dispersed in the bulk region, wherein the crystalline inorganic oxide regions are discontinuously formed to be each surrounded by the amorphous inorganic oxide of the bulk region. | ||
| 地址 | KR | ||