Semiconductor device with low on resistance and high breakdown voltage

摘要

A semiconductor device includes an epitaxial layer of semiconductor material of a first conductivity type, a body region of a second (opposite) conductivity type extending into the epitaxial layer from a main surface of the epitaxial layer, a source region of the first conductivity type disposed in the body region, and a channel region extending laterally in the body region from the source region along the main surface. A charge compensation region of the second conductivity type can be provided under the body region which extends in a direction parallel to the main surface and terminates prior to a pn-junction between the source and body regions at the main surface, and/or an additional region of the first conductivity type which has at least one peak doping concentration each of which occurs deeper in the epitaxial layer from the main surface than a peak doping concentration of the device channel region.

主权项

1. A semiconductor device, comprising:
an epitaxial layer of semiconductor material of a first conductivity type having a main surface; a body region of a second conductivity type opposite the first conductivity type extending into the epitaxial layer from the main surface; a source region of the first conductivity type disposed in the body region; a channel region extending laterally in the body region from the source region along the main surface of the epitaxial layer; a charge compensation region of the second conductivity type disposed under the body region; and an additional region of the first conductivity type disposed in the epitaxial layer adjacent the body region, the additional region having at least one peak doping concentration each of which occurs deeper in the epitaxial layer from the main surface than a peak doping concentration of the channel region.