Semiconductor device including fluorine-free tungsten barrier layer and method for fabricating the same

摘要

A method of forming a fluorine-free tungsten diffusion barrier layer having a reduced resistivity, and a semiconductor device, and method for forming such semiconductor device, using the fluorine-free tungsten diffusion barrier layer.

主权项

1. A method of forming a tungsten layer, the method comprising:
forming a fluorine-free tungsten carbide (FFWC) layer over a substrate using a fluorine-free tungsten source (FFWS); performing H2 plasma treatment to reduce the carbon content in the FFWC layer to 25-35 atom % based on the total atoms contained in the FFWC layer; forming a bulk tungsten layer over the FFWC layer to obtain a stack including the FFWC layer and the bulk tungsten layer; and annealing the stack to further reduce the carbon content in the stack to 10-15 atom % based on the total atoms contained in the stack.