Measuring apparatus and plasma processing apparatus

摘要

Provided a measuring apparatus includes a wavelength dispersion device which dispersed light reflected by one surface of an examination target having a thickness D and light reflected by a rear surface of the examination target, as incident light, a detector in which a plurality of photodetection elements receiving light dispersed by the wavelength dispersion device and detecting a power of the received light in are provided in an array shape, and a piezoelectric device which is attached to the detector to convert an applied voltage into a mechanical power, wherein the detector detects the power of the received light when the detector is shifted by the mechanical power converted by the piezoelectric device as much as d/m, where d is a width of each of the photodetection elements in an array direction and m is an integer equal to or greater than 2.

主权项

1. A measuring apparatus comprising:
a wavelength dispersion device which receives and disperses light reflected by a front surface of an examination target having a thickness D and light reflected by a rear surface of the examination target; a detector in which a plurality of photodetection elements receiving the light dispersed by the wavelength dispersion device and detecting a power of the received light in are provided in an array shape; a piezoelectric device which converts an applied voltage into a mechanical power, and shifts the photodetection elements by the mechanical power; and a measuring unit which is configured to
calculate the thickness of the examination target based on a frequency analysis of the light power detected by the photodetection elements in such a state that the photodetection elements are not shifted and the light power detected by the photodetection elements in such a state that the photodetection elements are shifted as much as d/m in an array direction, where d denotes a width of each of the photodetection elements in the array direction, and m denotes an integer equal to or greater than 2, andmeasure a temperature of the examination target based on a previously set relationship between the temperature and the thickness of the examination target.