| 发明名称 | Method for producing a field effect transistor with implantation through the spacers | ||
| 摘要 | The substrate successively includes a support substrate, an electrically insulating layer, a semiconductor material layer, and a gate pattern. The semiconductor material layer and gate pattern are covered by a covering layer. A first doping impurity is implanted in the semiconductor material layer through the covering layer so as to place the thickness of maximum concentration of the first doping impurity in the first layer. The covering layer is partly eliminated so as to form lateral spacers leaving source/drain electrodes free. | ||
| 申请公布号 | US9070709(B2) | 申请公布日期 | 2015.06.30 |
| 申请号 | US201114119395 | 申请日期 | 2011.06.09 |
| 申请人 | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES;STMICROELECTRONICS, INC. | 发明人 | Posseme Nicolas;Grenouillet Laurent;Le Tiec Yannick;Loubet Nicolas;Vinet Maud |
| 分类号 | H01L29/66;H01L21/8234;H01L21/84;H01L21/265 | 主分类号 | H01L29/66 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A method for producing a field effect transistor comprising successively: providing a substrate successively comprising a support substrate, an electrically insulating layer, a semiconductor material layer, and a gate pattern, covering the semiconductor material layer and the gate pattern by a covering layer, implanting a first doping impurity in the semiconductor material layer through the covering layer so as to place a maximum concentration of implanted first doping impurity at a first implantation depth in the semiconductor material layer, and partly eliminating the covering layer so as to form lateral spacers leaving source/drain electrodes free, wherein a thickness of the semi-conductor material layer is smaller than the first implantation depth. | ||
| 地址 | Paris FR | ||