Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion

摘要

A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in a recessed position at a side of the gate electrode, and a diffusion layer disposed in a surface layer of the semiconductor substrate.

主权项

1. A method for manufacturing a semiconductor device comprising:
forming a well diffusion layer in a semiconductor substrate by ion implantation; forming a gate electrode on the well diffusion layer of the semiconductor substrate; forming at least one insulating film over the entire well diffusion layer, the at least one insulating film being over the gate electrode; forming a recessed portion extending through the at least one insulating film and within the well diffusion layer of the semiconductor substrate at a side of the gate electrode; forming an epitaxial layer comprising a semiconductor material having a lattice constant different from that of the semiconductor substrate, the epitaxial layer being formed on the recessed portion of the well diffusion layer of the semiconductor substrate while the at least one insulating film remains over the well diffusion layer except at the recessed portion; forming a sidewall for the gate electrode from a portion of the at least insulating film that is between the gate electrode and the recessed portion while selectively removing other portions of the at least one insulating film from the well diffusion layer; and diffusing impurities into the epitaxial layer and a surface portion of the semiconductor substrate, the surface portion with the impurities being a diffusion layer, wherein,
the sidewall is formed after the epitaxial layer is formed,the epitaxial layer is between the gate electrode and the diffusion layer along a width direction,source/drain regions include the epitaxial layer with the impurities and the diffusion layer.