Integrated circuit power grid with improved routing resources and bypass capacitance

摘要

An integrated circuit power grid is provided with improved routing resources and bypass capacitance. A power grid for an integrated circuit comprises a plurality of thick metal layers having a plurality of metal traces, wherein at least one of the thick metal layers has a lower pitch than a substantial maximum pitch allowed under the design rules for a given integrated circuit fabrication technology. A power grid for an integrated circuit can also comprise a plurality of thin metal layers having a plurality of metal traces, wherein a plurality of the metal traces on different thin metal layers are connected by at least one via, wherein the at least one via is substantially surrounded by a metal trace on at least one thin metal level connected to a different power supply voltage than a power supply of one or more additional thin metal levels. The via can be positioned, for example, at an intersection of a given standard cell row and a given vertical strap.

主权项

1. A power grid for an integrated circuit, comprising:
a plurality of thick metal layers having a plurality of metal traces; and at least one thin metal layer, wherein the plurality of thick metal layers having the plurality of metal traces are configured to route power supplies, wherein at least one of said thick metal layers has a lower pitch than a pitch on another thick metal layer of the plurality of thick metal layers, and wherein said lower pitch increases one or more of a bypass capacitance of said power grid and a number of transitions between at least two power supply levels in a given area.