发明名称 |
Method and apparatus for forming a semiconductor gate |
摘要 |
The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material. |
申请公布号 |
US9070663(B2) |
申请公布日期 |
2015.06.30 |
申请号 |
US201313968507 |
申请日期 |
2013.08.16 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chu Chen-Liang;Chen Fei-Yuh;Yao Chih-Wen |
分类号 |
H01L21/3205;H01L29/423;H01L29/66;H01L29/78;H01L21/00;H01L29/06 |
主分类号 |
H01L21/3205 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A method of fabricating a semiconductor device, comprising: forming a gate over a substrate, forming at least one through-hole opening in the gate; filling the at least one through-hole opening with a dielectric material. |
地址 |
Hsin-Chu TW |