| 发明名称 | Semiconductor device and method of manufacturing semiconductor device | ||
| 摘要 | A semiconductor device including: a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along the thickness direction of the semiconductor substrate; a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material portion that forms the vertical hole; a metallic film that is formed within the insulating film and that is electrically connected to the vertical hole wiring portion; and a conductive protective film that is formed to be in contact with the metallic film within the insulating film and that is formed in a region that includes a contact region of a probe during a probe test that is performed in the middle of manufacture on a film face of the metallic film. | ||
| 申请公布号 | US9070643(B2) | 申请公布日期 | 2015.06.30 |
| 申请号 | US201213468457 | 申请日期 | 2012.05.10 |
| 申请人 | SONY CORPORATION | 发明人 | Nagata Masaya |
| 分类号 | H01L21/66;H01L29/10;H01L21/768;H01L23/48;H01L27/146 | 主分类号 | H01L21/66 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A method of manufacturing a semiconductor device comprising: forming a metallic film inside an insulating film of a base material portion that includes a semiconductor substrate and the insulating film which is formed on one face of the semiconductor substrate; forming a conductive protective film to be in physical contact with the metallic film within a predetermined region that is within the insulating film and within a film face of the metallic film, wherein the conductive protective film lines the metallic film in a region that includes a contact region of a probe; performing a probe test by causing the probe to be in contact with one of the metallic film and the conductive protective film which is exposed on a surface of the insulating film at an opposite side to the semiconductor substrate side; forming a vertical hole on the base material portion along a thickness direction of the semiconductor substrate after the probe test; forming a glass sealing material on at least one of the metallic film and the conductive protective film; and attaching a glass substrate to the base material portion via the glass sealing material. | ||
| 地址 | JP | ||