Non-volatile semiconductor memory

摘要

A non-volatile semiconductor memory includes a memory array. In a programming operation, programming pulses are applied to a page of the memory array to program data to the page. In an erase operation, erase pulses are applied to a block of the memory array to erase data in the block. The non-volatile semiconductor memory performs a pre-program operation before the erase operation and a post-erase operation after the erase operation. In the pre-program operation, each page of the block is programmed according to voltage information relating programming pulses. In the erase operation, data in the block is erased according to the voltage information relating programming pulses.

主权项

1. A non-volatile semiconductor memory, comprising:
a memory array, comprising a plurality of memory cells arranged in a matrix form,
wherein in a programming operation, the non-volatile semiconductor memory applies one or more than one programming pulse on a selected page of the memory array to program data to the selected page,wherein in an erase operation, the non-volatile semiconductor memory applies one or more than one erase pulse on a selected block of the memory array to erase data in the selected block, wherein the selected block includes a plurality of pages, and the selected page is one of the plurality of pages,wherein before the erase operation, the non-volatile semiconductor memory performs a pre-program operation,wherein after the erase operation, the non-volatile semiconductor memory performs a post-erase operation,wherein in the post-erase operation, the non-volatile semiconductor memory writes in voltage information relating to programming pulses of each page of the selected block and voltage information relating to erase pulses of the selected block to a predefined region in the selected block,wherein in the pre-program operation, the non-volatile semiconductor memory programs each page of the selected block according to voltage information relating to programming pulses which is stored in the predefined region, andwherein in the erase operation, the non-volatile semiconductor memory erases data in the selected block according to voltage information relating to erase pulses which is stored in the predefined region.