发明名称 Method of producing synthetic quartz glass for excimer laser
摘要 Disclosed is a method of producing a synthetic quartz glass for excimer laser by depositing on a target silica particulates obtained by subjecting a silica raw material to vapor-phase hydrolysis or oxidative decomposition in an oxyhydrogen flame in a vacuum sintering furnace to form a porous silica base material, vitrifying the porous silica base material, and subjecting the vitrified material to hot forming, an annealing treatment and a hydrogen doping treatment, wherein the vitrification of the porous silica base material includes: (a) a step of holding a vacuum pressure at or below 20.0 Pa in a temperature range from 400° C., inclusive, to 900° C., exclusive; (b) a step of holding a vacuum pressure at or below 10.0 Pa in a temperature range from 900° C., inclusive, to 1100° C., exclusive; and (c) a step of holding a vacuum pressure at or below 3.0 Pa in a temperature range from 1100° C. to a transparent-vitrification temperature.
申请公布号 US9067814(B2) 申请公布日期 2015.06.30
申请号 US201012688332 申请日期 2010.01.15
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 Maida Shigeru;Otsuka Hisatoshi
分类号 C03B20/00;C03B19/14 主分类号 C03B20/00
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method of producing a synthetic quartz glass for excimer laser, comprising the steps of: depositing on a target silica particulates in a vacuum sintering furnace to form a porous silica base material; vitrifying the porous silica base material to obtain a vitrified material; and subjecting the vitrified material to hot forming, an annealing treatment and a hydrogen doping treatment, so that the synthetic quartz glass suitable for use in an excimer laser is produced, wherein the silica particulates have been obtained by subjecting a silica raw material to vapor-phase hydrolysis or oxidative decomposition in an oxyhydrogen flame, and the vitrification of the porous silica base material comprises steps of: (a) holding a vacuum pressure at or below 20.0 Pa in a temperature range from 400° C., inclusive, to 900° C., exclusive; (b) holding a vacuum pressure at or below 10.0 Pa in a temperature range from 900° C., inclusive, to 1100° C., exclusive; and (c) holding a vacuum pressure at or below 3.0 Pa in a temperature range from 1100° C. to a transparent-vitrification temperature, wherein the porous silica base material is held in a temperature range from 150° C. to 350° C. for a period of time from 30 minutes to 6 hours, prior to the step (a).
地址 Tokyo JP