Semiconductor device and method of controlling non-volatile memory device

摘要

A control circuit of a semiconductor device (memory module) realizes long life and others by a mechanism that suppresses and smoothes variations in use of a memory by equalizing the sizes of data write and data erase with respect to a data write request and sequentially allocating and using addresses of the memory in data write to an overwritable non-volatile memory device without carrying out an overwriting operation even in the case of an overwrite request. The control circuit realizes data write by a set of two types of operations of (a) an operation of erasing data of a first address or an operation of setting a flag value to an invalid state and (b) an operation of writing data to a second address different from the first address or an operation of setting a flag value to a valid state.

主权项

1. A semiconductor device comprising:
a non-volatile memory device; and a control circuit device configured to access the non-volatile memory device, wherein the control circuit device carries out, with respect to a first write request from outside including a first address serving as a first-type address and first data, control of allocating a second-type address of the non-volatile memory device to the first-type address independently from the first-type address, wherein the control circuit device allocates a second address serving as the second-type address to the first address of the first write request, and wherein, during a writing operation of the first data to the second address of the non-volatile memory device, the control circuit device allocates a fourth address serving as the second-type address to a third address of a second write request from outside, the third address serving as the first-type address.