Modifying data stored in a multiple-write flash memory cell

摘要

Flash memory stored data modification is described. In embodiments, a flash memory system includes flash memory and a memory controller that manages data write and erase operations to the flash memory. The flash memory includes a first flash memory region of single-write flash memory cells that are each configured for a data write operation and a corresponding erase operation before a subsequent data write operation. The flash memory also includes a second flash memory region of multiple-write flash memory cells that are each configured for multiple data write operations before an erase operation.

主权项

1. A flash memory system comprising:
a flash memory having a plurality of memory cells; and a memory controller in communication with the flash memory, wherein the memory controller is configured to
(i) perform a first write operation to write first data to a first multiple-write flash memory cell of the plurality of memory cells, and(ii) subsequent to performing the first write operation, perform a second write operation to write second data to the first multiple-write flash memory cell of the plurality of memory cells, wherein the memory controller is configured to perform the second write operation to write the second data to the first multiple-write flash memory cell of the plurality of memory cells without having to first perform an erase operation to erase the first data written to the first multiple-write flash memory cell of the plurality of memory cells.