发明名称 |
Method for manufacturing thin film compound solar cell |
摘要 |
To manufacture a thin film compound solar cell which can improve the adhesive property of electrodes even when being provided with a base material, and which prevents the base material from being separated. A cell main body configured by laminating a plurality of compound semiconductor layers is formed on a substrate. A rear surface electrode 7 is formed on the cell main body, and a rear surface film 8 as the base material is formed on the rear surface electrode 7. A reinforcing material 9 is attached on the rear surface film 8. The substrate is separated from the cell main body, and the cell main body is mesa-etched. A surface electrode 13 is formed on a contact layer 3 after the etching. The reinforcing material 9 is separated, and the surface electrode 13 is annealed. The formed thin film compound solar cell is separated into a plurality of solar cell elements. |
申请公布号 |
US9070819(B2) |
申请公布日期 |
2015.06.30 |
申请号 |
US201314060985 |
申请日期 |
2013.10.23 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
Kodama Tomoya |
分类号 |
H01L21/00;H01L31/18;H01L31/0392;H01L31/048;H01L31/0693 |
主分类号 |
H01L21/00 |
代理机构 |
Nixon & Vanderhye P.C. |
代理人 |
Nixon & Vanderhye P.C. |
主权项 |
1. A method for manufacturing a thin film compound solar cell having a cell having a compound semiconductor layer in which at least one PN junction is formed, the method comprising:
a process of forming a compound semiconductor layer comprising at least one PN junction on a side of a substrate; a process of forming a rear surface electrode on a surface of the compound semiconductor layer; a process of forming a base material made of a polyimide film by applying, annealing and curing polyimide directly on the rear surface electrode; a process of attaching a reinforcing material directly to the base material, wherein the reinforcing material comprises an adhesive material; a process of separating the substrate from the compound semiconductor layer; a process of forming a surface electrode; and a process of removing the reinforcing material from the base material, wherein a thickness of the polyimide film is set between 5 μm and 15 μm. |
地址 |
Osaka JP |