发明名称 |
Solar cell and texturing method thereof |
摘要 |
The present invention relates to a solar cell. The solar cell includes a substrate of a first conductive type, the substrate having a textured surface on which a plurality of projected portions are formed, and surfaces of the projected portions having at least one of a plurality of particles attached thereto and a plurality of depressions formed thereon; an emitter layer of a second conductive type opposite the first conductive type, the emitter layer being positioned in the substrate so that the emitter layer has the textured surface; an anti-reflection layer positioned on the emitter layer which has the textured surface and including at least one layer; a plurality of first electrodes electrically connected to the emitter layer; and at least one second electrode electrically connected to the substrate. |
申请公布号 |
US9070800(B2) |
申请公布日期 |
2015.06.30 |
申请号 |
US200912557480 |
申请日期 |
2009.09.10 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
Kim Jinsung;Choi Chulchae;Park Changseo;Chang Jaewon;Kim Hyungseok;Choe Youngho;Yoon Philwon |
分类号 |
H01L31/00;H01L31/0236;H01L31/0352;H01L31/068;H01L31/18 |
主分类号 |
H01L31/00 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A texturing method of a solar cell, the method comprising:
forming a textured surface on a silicon semiconductor substrate for the solar cell to provide a plurality of projected portions; forming a particle formation layer on the textured surface of the silicon semiconductor substrate by sputtering or chemical vapor decomposition, the particle formation layer comprising a particle formation material and a medium material; and leaving mainly a plurality of particles of the particle formation material on the textured surface of the silicon semiconductor substrate by removing the medium material from the particle formation layer, wherein the particle formation material is the same material as the silicon semiconductor substrate and the medium material comprises a plurality of metal particles. |
地址 |
Seoul KR |