LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME

摘要

A light emitting diode chip is disclosed. The light emitting diode chip comprises: a circuit board including a predetermined pattern; a light emitting structure; an electrode including an electrode pad electrically connected to a second conductive semiconductor layer and an extension part extended from the electrode pad; a transparent electrode layer formed between the electrode and the second conductive semiconductor layer; an under structure which is interposed between the second conductive semiconductor layer and the transparent electrode layer and located under the electrode; a rotated accumulation structure to reflect light emitted from an activation layer; and an interface layer located between the circuit board and the rotated accumulation structure. The rotated accumulation structure includes a plurality of dielectric pairs including a second material layer having a low reflective ratio and a first material layer having a high reflective ratio. The dielectric pairs include: a plurality of first dielectric pairs formed of the first material layer having a lower optical thickness thanλ/4 for a central waveform of a visible light area and a second material layer; at least two second dielectric pairs formed of the second material layer and the first material layer in which one of the first material layer and the second material layer has a lower optical thickness thanλ/4 and one of the first material layer and the second material layer has a larger optical thickness thanλ/4; and a plurality of third dielectric pairs formed of the first and the second material layer which have the optical thickness are larger than theλ/4. Each sublayer of the first to the third dielectric pairs is formed with the same material layer.