| 发明名称 | Metal oxide TFT with improved temperature stability | ||
| 摘要 | A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level. | ||
| 申请公布号 | US9070779(B2) | 申请公布日期 | 2015.06.30 |
| 申请号 | US201213718183 | 申请日期 | 2012.12.18 |
| 申请人 | CBRITE Inc. | 发明人 | Shieh Chan-Long;Foong Fatt;Musolf Juergen;Yu Gang |
| 分类号 | H01L29/66;H01L29/786 | 主分类号 | H01L29/66 |
| 代理机构 | Parsons & Goltry | 代理人 | Parsons Robert A.;Goltry Michael W.;Parsons & Goltry |
| 主权项 | 1. A metal oxide thin film transistor comprising: a metal oxide semiconductor layer having a metal oxide semiconductor channel defined therein, the metal oxide semiconductor layer having a conduction band with a first energy level; and a layer of passivation material covering at least a portion of the metal oxide semiconductor channel, the passivation material having a conduction band with a second energy level, the second energy level being equal to, or less than 0.5 eV above the first energy level, such that a barrier between the metal oxide semiconductor channel and the passivation layer is reduced allowing carriers to be drained off into the passivation layer. | ||
| 地址 | Goleta CA US | ||