Dry etching method

摘要

According to one aspect of the present invention, there is provided a dry etching method which carries out patterning of a resin film provided on a substrate, by reactive ion etching using a resist mask, wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0 to 5.0% is used as an etching gas; and pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more.

主权项

1. A dry etching method comprising patterning a resin film provided on a substrate, by reactive ion etching using a resist mask,
wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0% to 1.25% is used as an etching gas, wherein a pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more, wherein the reactive ion etching includes a first stage in which 5% to 95% of a thickness of the resin film is removed beginning with a start of etching, and a second stage in which etching is performed after the first stage, wherein high-frequency antenna power in the second stage is higher than high-frequency antenna power in the first stage, and wherein high-frequency bias power in the first stage is 450 W to 1050 W and high-frequency bias power in the second stage is 30 W to 70 W.