发明名称 Method and device for permanent bonding of wafers, as well as cutting tool
摘要 A method for bonding a first bond surface of a first solid substrate consisting of a first material to a second bond surface of a second solid substrate consisting of a second material. The method including the steps of: working one of the first and/or second bond surfaces with a cutting tool at a speed vs that is below a critical speed vk and at a temperature Ts that exceeds a critical temperature Tk, down to a surface roughness O that is less than 1 μm; bringing the first solid substrate into contact with the second solid substrate at the bond surfaces, and exposing the solid substrates that are in contact to temperature in order to form a permanent bond that is at least primarily produced by recrystallization at the bond surfaces.
申请公布号 US9067363(B2) 申请公布日期 2015.06.30
申请号 US201213808415 申请日期 2012.01.23
申请人 EV Group E. Thallner GmbH 发明人 Martinschitz Klaus;Wimplinger Markus;Rebhan Bernhard
分类号 B23K20/22;B23K20/24;B29C65/74;B23K20/02 主分类号 B23K20/22
代理机构 Kusner & Jaffe 代理人 Kusner & Jaffe
主权项 1. Method for bonding a first bond surface of a first solid substrate consisting of a first material to a second bond surface of a second solid substrate consisting of a second material, said method comprising the steps of: working one of a first bond surface and a second bond surface with a cutting tool to create a metastable structure in at least a near-surface area and to produce a reduced surface roughness of less than 100 nm, bringing the first solid substrate into contact with the second solid substrate at the bond surfaces, and exposing the solid substrates that are in contact to a temperature sufficient to form a permanent bond, said permanent bond being at least primarily produced by recrystallization at the bond surfaces down to a recrystallization depth R that is greater than the surface roughness O of the bond surfaces with a bond temperature TB that exceeds the recrystallization temperature.
地址 AT