发明名称 Semiconductor chip with modified regions for dividing the chip
摘要 A semiconductor wafer with modified regions formed in the substrate is provided. A modified region is formed apart from the side of a wafer and a pad is formed over an insulating film, which is formed over the main surface of the substrate of the wafer. Further, the modified region is formed closer to the side surface of the substrate than the pad. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.
申请公布号 US9070560(B2) 申请公布日期 2015.06.30
申请号 US201414285943 申请日期 2014.05.23
申请人 RENESAS ELECTRONICS CORPORATION 发明人 Abe Yoshiyuki;Miyazaki Chuichi;Mutou Hideo;Higashino Tomoko
分类号 H01L23/544;H01L23/00;B23K26/00;B23K26/40;H01L21/67;H01L21/683;H01L21/78;H01L25/065;H01L21/66 主分类号 H01L23/544
代理机构 Mattingly & Malur, PC 代理人 Mattingly & Malur, PC
主权项 1. A semiconductor chip, comprising: a substrate including a main surface, a back surface opposite to the main surface, a side surface extending between the main surface and the back surface; an interlayer insulating film formed over the main surface of the substrate; a pad formed in a layer over the interlayer insulating film; a protective film formed over the interlayer insulating film such that the protective film exposes the pad; and a modified region formed in the substrate, wherein the interlayer insulating film has a wiring layer and a low-dielectric constant film; wherein the substrate is comprised of silicon, wherein a dielectric constant of the low-dielectric constant film is lower than that of the substrate, wherein the modified region is spaced apart from the side surface of the substrate, wherein the modified region is closer than the pad to the side surface of the substrate, and wherein no metal pattern is disposed in a part of the layer where the pad is formed that is above and between the modified region and the side surface of the substrate.
地址 Kanagawa JP