PROCESS FOR GROWING SILICON MONOCRYSTALS FROM MELT

摘要

The invention relates to technology of producing mono crystals of semiconducting and metal materials for electronic engineering, in particular, silicon growing by Chokhralsky' method. The invention is provided to grow silicon mono crystals aimed at reducing microdefects in the grown crystals. The task is characterized in that ultrasonic waves from 8 to 20 kHz, intensity from 0.1 to 0.5 watt/cmeffect on interphase crystal-melt, wherein the effect is performed in the direction of drawing from the crystal side.