发明名称 Methods for obtaining hollow nano-structures
摘要 Methods are provided for obtaining hollow nano-structures which include the steps of providing a suspended film starting layer on a support substrate, depositing on the starting layer a sacrificial layer, performing, in progressive sequence, a complete erosion phase of said support substrate and starting layer and performing an at least partial erosion phase of the sacrificial layer previously deposited on the starting layer so as to obtain holes passing through the starting layer and passing or non passing through the sacrificial layer, depositing, on the side of the support substrate opposite to that where the starting layer is put, at least one covering layer arranged to internally cover the holes created by the progressive erosion. Hollow nano-structures formed by such methods are also provided.
申请公布号 US9067242(B2) 申请公布日期 2015.06.30
申请号 US201213978407 申请日期 2012.01.26
申请人 Fondazione Istituto Italiano di Tecnologia 发明人 De Angelis Francesco;Di Fabrizio Enzo
分类号 B31D3/00;B05D3/06;B81C1/00;B82Y35/00;G01Q60/40;G01Q70/16 主分类号 B31D3/00
代理机构 代理人 Alderson, Jr. Robert E.
主权项 1. A method for obtaining hollow nano-structures comprising the steps of: providing a suspended film starting layer on a support substrate; depositing on the starting layer a sacrificial layer; performing, in progressive sequence, a complete erosion phase of said support substrate and starting layer and performing an at least partial erosion phase of the sacrificial layer deposited on the starting layer so as to obtain holes in the starting layer and optionally in the sacrificial layer; and depositing, on the side of the support substrate opposite to that of the starting layer, at least one coating layer arranged to internally coat the holes created by the at least partial erosion phase, wherein the at least one coating layer provides said hollow nano-structures.
地址 Genoa IT