Peripheral electrical connection of package on package

摘要

Various embodiments of mechanisms for forming a die package using through sidewall vias (TsVs), which are formed by sawing through substrate via (TSV) in half, at edges of dies described enable various semiconductor dies and passive components be electrically connected to achieve targeted electrical performance. Redistribution structures with redistribution layers (RDLs) are used along with the TsVs to enable the electrical connections. Since the TsVs are away from the device regions, the device regions do not suffer from the stress caused by the TSV formation. In addition, electrical connections between upper and lower dies by the TsVs increases the efficiency of the area utilization of the die package.

主权项

1. A semiconductor die package, comprising:
a first semiconductor die with a first device region, a first major surface, a second major surface, and a sidewall surface connecting the first major surface and the second major surface, and a first through sidewall via (TsV) formed therein, wherein the first TsV is separated from the device region, and wherein the first TsV has a first end at the first major surface of the first semiconductor die that is laterally displaced from the sidewall surface of the first semiconductor die and has a second end at the second major surface of the first semiconductor die that is laterally immediately adjacent the sidewall surface of the first semiconductor die; a first conductive structure formed over the first semiconductor die, wherein the first conductive structure is electrically connected to devices in the first device region and physically contacts the first end of the first TsV of the first semiconductor die; and a second conductive structure formed over a surface on the opposite side of the first semiconductor die from the first conductive structure, wherein the second conductive structure contacts the second end of the first TsV of the first semiconductor die.