发明名称 APPARATUS AND METHOD FOR MEASURING THICKNESS AND TEMPERATURE AND SUBSTRATE PROCESSING SYSTEM
摘要 <p>The present invention has an effect of measuring a thickness of a ceramic member arranged within a processing chamber. A thickness and temperature measuring apparatus (50) for measuring a thickness of a ceramic member (35) arranged within a chamber (11) in a vacuum atmosphere comprises an optical system including a terahertz wave generation unit (51) to output a terahertz wave, a terahertz wave analysis unit (53) to analyze the inputted terahertz wave, and a half mirror (52) to induce the terahertz wave outputted from the terahertz wave generation unit (51) to the ceramic member (35) and to induce a reflected wave from the ceramic member (35) to the terahertz wave analysis unit (53). The terahertz wave analysis unit (53) is capable of obtaining an optical path difference between a first reflected wave from a surface of a ceramic member (35), and a second reflected wave from the other surface, and obtaining a thickness d of the ceramic member (35) from the obtained optical path difference by Fourier transforming a reflected wave spectrum from the ceramic member (35).</p>
申请公布号 KR20150073095(A) 申请公布日期 2015.06.30
申请号 KR20140182097 申请日期 2014.12.17
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUDO TATSUO;KOSHIMIZU CHISHIO
分类号 H01L21/66 主分类号 H01L21/66
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