| 摘要 |
<p>The present invention relates to an atomic layer deposition apparatus. According to the present invention, the atomic layer deposition apparatus comprises: an atomic layer deposition source in which an atom layer is formed on a substrate which is being transferred, wherein the atomic layer deposition source comprises: a first source area through which the substrate passes in a forward direction of a transfer direction and is exposed to a first source gas; a first purge area in which the substrate passing the first source area is exposed to purge gas; a second source area in which the substrate passing the first purge area is exposed to a second source gas; and a second purge area in which the substrate passing the second source area is exposed to the purge gas, and is plurally arranged in the forward direction of the transfer direction, and wherein arrangements of each area at the time of transfer in a reverse direction of the substrate is made to be equal to arrangements of each area of transfer in the forward direction of the substrate, and, at the same time, each area is re-arranged so that a substrate exposure time when the substrates are exposed to corresponding gas of each area is equal to a substrate exposure time when the substrates are exposed to corresponding gas of each area at the time of the transfer of the forward direction. Therefore, provided is the atomic layer deposition source which is available in a both direction transfer of the substrate such that a process time can be shortened, under the construction in that the order that the substrates are exposed and arranged to each source gas and purge gas, and the substrate exposure times in the reverse transfer direction of the substrate are equal to those of the forward transfer direction of the substrate.</p> |
