METHOD FOR MANUFACTURING CIGS LIGHT ABSORBING LAYER CAPABLE OF PREVENTING GA SEGREGATION USING ELECTRON BEAM AND METHOD FOR MANUFACTURING CIGS SOLAR CELL USING THE SAME

摘要

An embodiment of the present invention relates to a method for manufacturing a CIGS light absorption layer capable of preventing Ga segregation by using electron beams, and a CIGS solar cell manufacturing method thereof. The present invention can use the electron beams to prevent the Ga segregation while increasing the selenide processing speed. According to the embodiment of the present invention, the CIGS light absorption layer manufacturing method includes the steps of: (a) forming a precursor thin-film having selenide compounds with a covalent structure on a substrate; and (b) selenizing the covalent structure by projecting the electron beams thereon.