| 摘要 |
A laser annealing method that scans and irradiates a pulse laser having a line beam as the beam-cross-sectional shape therefor, upon a non-monocrystalline semiconductor film and in the short-axis direction of the line beam, in order to reduce irradiation unevenness caused by fluctuation in laser energy output. In the laser annealing method, irradiation is performed such that: the line beam has a steepness section positioned in the end section in the short-axis direction, in the beam intensity profile; the steepness section is an area having a maximum intensity in the beam intensity profile of 10%-90%; and the short-axis direction width on the rear side in the scanning direction in the steepness section is no more than 50 µm on the irradiation surface of the non-monocrystalline semiconductor film. As a result the impact of fluctuation in fusion width when the steepness section suddenly becomes steep and the energy output fluctuates can be alleviated and irradiation unevenness reduced. |
