METHOD FOR ETCHING MRAM MATERIAL USING REACTIVE ION BEAM PULSE

摘要

Disclosed is a method for etching MRAM material using reactive ion beam pulse. A method for etching MRAM material according to the present invention includes an adsorption step of adsorbing a reactive gas including plasm generated in an upper chamber to the surface of a MRAM substrate, by using an etching device which includes an upper chamber for generating plasma, a grid part which includes is formed in the lower part of the upper chamber and includes a first to a third grid, and a lower chamber which is formed in the lower part of the grid part and allows a substrate to be placed on, and a detachment step of detaching an target etching layer by irradiating an accelerated reactive ion beam to the surface of the target etching layer to obtain energy which is higher than the combination energy of a first sub layer and the target etching layer adsorbed by the reactive gas and is lower than the combination energy of the first sub layer and a second sub layer.