发明名称 GAS DISCHARGE PIPE AND INGOT GROWING APPARATUS HAVING THE SAME
摘要 <p>The present invention relates to a gas discharge pipe installed in the lower part of a chamber to discharge gas in the chamber providing a predetermined space where an ingot growing process is performed to the outside. The gas discharge pipe has a hollow connecting the inner side and the outer side of the chamber and is formed as a left discharge pipe and a right discharge pipe by being divided by a horizontal surface including a shaft of the hollow. The gas discharge pipe includes a connection unit connecting an upper discharge pipe and the lower discharge pipe. The gas discharge pipe can be separated from and installed in the chamber without dividing a hot zone structure, thereby improving productivity of an ingot growing apparatus with shortened replacement time.</p>
申请公布号 KR20150071850(A) 申请公布日期 2015.06.29
申请号 KR20130158916 申请日期 2013.12.19
申请人 LG SILTRON INCORPORATED 发明人 LEE, HYO WON;CHOI, HYUN KYO
分类号 C30B15/00;C30B29/06;C30B35/00 主分类号 C30B15/00
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