发明名称 |
GAS DISCHARGE PIPE AND INGOT GROWING APPARATUS HAVING THE SAME |
摘要 |
<p>The present invention relates to a gas discharge pipe installed in the lower part of a chamber to discharge gas in the chamber providing a predetermined space where an ingot growing process is performed to the outside. The gas discharge pipe has a hollow connecting the inner side and the outer side of the chamber and is formed as a left discharge pipe and a right discharge pipe by being divided by a horizontal surface including a shaft of the hollow. The gas discharge pipe includes a connection unit connecting an upper discharge pipe and the lower discharge pipe. The gas discharge pipe can be separated from and installed in the chamber without dividing a hot zone structure, thereby improving productivity of an ingot growing apparatus with shortened replacement time.</p> |
申请公布号 |
KR20150071850(A) |
申请公布日期 |
2015.06.29 |
申请号 |
KR20130158916 |
申请日期 |
2013.12.19 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
LEE, HYO WON;CHOI, HYUN KYO |
分类号 |
C30B15/00;C30B29/06;C30B35/00 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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