发明名称 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
摘要 <p>The present invention relates to an image sensor preventing degradation of properties caused by increase in ratio between signal and noise, and to a fabricating method thereof. The image sensor comprises a transfer gate formed on a front surface of a substrate; a photoelectric conversion area formed on the substrate on one side of the transfer gate; and a floating diffusion area including a trench formed on the other side substrate of the transfer gate, a barrier film covering the bottom of at least the trench, and a conductive film gap-filled on the trench.</p>
申请公布号 KR20150071768(A) 申请公布日期 2015.06.29
申请号 KR20130158162 申请日期 2013.12.18
申请人 SK HYNIX INC. 发明人 KIM, DO HWAN;YANG, YUN HEE;KIM, DAE WOO;KIM, JONG CHAE;LIM, SU HWAN
分类号 H01L27/146 主分类号 H01L27/146
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