| 摘要 |
<p>The present invention relates to a method for forming a gate electrode, and a semiconductor device having the gate electrode obtained by using the same. The method for forming the gate electrode includes: a step for forming a first insulator film on a substrate; a step for applying and etching photoresist on the first insulator film in order to create a gate foot pattern; a step for forming a foot of the gate electrode on the substrate with the formed gate foot pattern; a step for forming a second insulator film on the substrate with the formed gate foot pattern; a step for applying and etching multi-layered photoresist on the second insulator film in order to create a gate stem and head pattern; and a step for forming the gate electrode on the substrate with the formed gate stem and head pattern. The gate electrode manufactured using the said method fills in empty spaces around the foot of the gate electrode to control the movement of an electrode metal material, which can occur when there is an empty space, and as a result, secures reliable properties of semiconductor devices. Also a gate electrode head of the said gate electrode serves as a path for gate current to reduce self-resistance of the gate electrode.</p> |
