CHEMICAL VAPOR DEPOSITION SYSTEM

摘要

The present invention relates to a chemical vapor deposition system. The chemical vapor deposition system may comprise: a cooling chamber to cool an inhibitor and a reactant flowing in for chemical vapor deposition; a vaporization chamber to vaporize the inhibitor and the reactant which have passed through the cooling chamber; and a chemical vapor deposition device to make the vaporized reactant be deposited on a substrate. In addition to this, a plasma part for decomposing the vaporized reactant into a radical ion can be disposed between the vaporization chamber and the chemical vapor deposition device. According to the present invention, a reactant flowing in for chemical vapor deposition can be stored at constant temperature and humidity prior to the deposition.