| 发明名称 |
METHOD OF FORMING CONTACT LAYER |
| 摘要 |
A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer. |
| 申请公布号 |
US2015179518(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414570352 |
申请日期 |
2014.12.15 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MURAKAMI Seishi;SHIMIZU Takaya;WAKABAYASHI Satoshi |
| 分类号 |
H01L21/768;H01L21/3205 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, the method comprising:
disposing the substrate in a chamber; introducing a Ti source gas, a reducing gas and an Si source gas into the chamber; and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate, a portion of the TiSix film in a bottom of the contact hole corresponding to the contact layer. |
| 地址 |
Tokyo JP |
