Tantalum-Based Copper Barriers and Methods for Forming the Same

摘要

Embodiments described herein provide tantalum-based copper barriers and methods for forming such barriers. A dielectric body is provided. A first layer is formed above the dielectric body. The first layer includes tantalum. A second layer is formed above the first layer. The second layer includes manganese. A third layer is formed above the second layer. The third layer includes copper.

主权项

1. A method for forming a copper interconnect, the method comprising:
providing a dielectric; forming a first layer above the dielectric, wherein the first layer comprises tantalum; forming a second layer above the first layer, wherein the second layer comprises manganese; and forming a third layer above the second layer, wherein the third layer comprises copper.