| 发明名称 |
METHOD FOR DEPOSITING EXTREMELY LOW RESISTIVITY TUNGSTEN |
| 摘要 |
Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity. |
| 申请公布号 |
US2015179461(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314135375 |
申请日期 |
2013.12.19 |
| 申请人 |
LAM Research Corporation |
发明人 |
Bamnolker Hanna;Humayun Raashina;Wang Deqi;Guan Yan |
| 分类号 |
H01L21/285;C23C16/46;C23C16/52;H01L21/02;C23C16/14 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming tungsten film on a substrate, the method comprising:
providing the substrate with a nitride layer; annealing the nitride layer; and depositing tungsten on the nitride layer to form the tungsten film,
wherein the nitride layer is annealed before tungsten is deposited. |
| 地址 |
Fremont CA US |
