主权项 |
1. A method of fabricating semiconductors comprising:
disposing a first layer in contact with a first substrate; disposing a mask in contact with a plurality of regions of the first layer, wherein the mask has a first side and a second side, wherein the first side is in contact with the first layer, wherein the second side is opposite the first side, wherein the mask comprises a plurality of sections, and wherein each pair of adjacent mask sections forms an opening; growing a second layer by lateral epitaxial overgrowth through at least some openings formed by the pairs of adjacent mask sections at an angle normal to the mask and on the second side of the mask, and wherein at least a portion of the second layer comprises a single crystalline structure; removing at least a portion of the second layer, wherein the removed portion is part of the second layer that grew through an least one opening of the plurality of openings; bonding a second substrate to the second layer, wherein the second substrate is a flexible substrate; removing the mask; and removing the first substrate. |