Vorrichtung zum Herstellen eines SiC-Einkristalls durch ein Lösungs-Wachstums-Verfahren und Verfahren zum Herstellen des SiC-Einkristalls durch Verwenden der Herstellungsvorrichtung und des in der Herstellungsvorrichtung verwendeten Tiegels

摘要

A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.