BILAYER GRAPHENE TUNNELING FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a bilayer graphene-based semiconductor device having efficient switching.SOLUTION: An embodiment comprises a bilayer graphene layer 103, a top gate electrode 133 and a bottom gate electrode 121. The top gate electrode 133 and the bottom electrode 121 are horizontally displaced from each other and positioned such that a source region 150, a channel region 140, and a drain region 160 are electrically induced in the chemically undoped bilayer graphene layer 103 upon appropriate biasing of the gate voltage.