发明名称 SINGLE CRYSTAL SILICON LIFTING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a single crystal silicon lifting device that can improve productivity as single crystal silicon used for a solar battery etc., is lifted at a high speed while suppressed from crooking to deform when the single crystal silicon is produced by lifting. ! SOLUTION: A single crystal silicon lifting device includes: a chamber 10; a quartz crucible 15; a crucible driving mechanism 20 which rotates the quartz crucible 15 on an axis O; a seed rotating mechanism 35 which lowers and dips a seed S in a silicon melt M reserved in the quartz crucible 15, lifts the seed, and also rotates the seed on the axis O; a cooling pipe 42 which cools the inside of the chamber 10; and a control part 50. The cooling pipe 42 includes an annular part, formed to circulate cooling water in a peripheral direction, below a top chamber 12 at an interval with the single crystal silicon, and the chamber 10 has a blackened part of ≥0.50 in emissivity ε formed on an inner surface of a chamber upper part. ! C
申请公布号 JP2015117145(A) 申请公布日期 2015.06.25
申请号 JP20130260070 申请日期 2013.12.17
申请人 MITSUBISHI MATERIALS TECHNO CORP 发明人 YANABA MICHIO
分类号 C30B29/06;C30B15/00 主分类号 C30B29/06
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