发明名称 SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT AND SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER MODULE AND SEMICONDUCTOR ELEMENT
摘要 A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.
申请公布号 US2015180203(A1) 申请公布日期 2015.06.25
申请号 US201514622363 申请日期 2015.02.13
申请人 Furukawa Electric Co., Ltd. 发明人 KINUGAWA Kouhei;Taniguchi Hidehiro;Tajima Masafumi;Ishii Hirotatsu;Namegaya Takeshi
分类号 H01S5/16;H01S5/026;H01S5/30;H01S5/20 主分类号 H01S5/16
代理机构 代理人
主权项 1. A semiconductor optical element comprising: a semiconductor layer portion that includes an optical waveguide layer, wherein the semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer, the semiconductor layer portion includes two or more regions that extend in a deposition direction, at least one of the two or more regions contains both the first impurity and the second impurity, and the two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.
地址 Tokyo JP